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The 241LT is a 1310-nm single-mode, edge-emitting, short-cavity, spot-size converted DFB laser diode chip for use in applications up to 16Gb/s. The design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance coating on the front facet and a very high reflectance coating on the rear facet. Gold bonding pads are provided on both the p and n sides. A hexadecimal number appears on both sides of the chip for identification purposes. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature tests. Each shipped bare die is fully tested at 25°C. These dies are identical to those used in Broadcom’s components-level products.


  • Very low threshold current
  • High output power
  • Capable of transmission up to 16 Gb/s
  • 1310-nm lasing wavelength
  • Near circular and small beam pattern
  • Integrated spot-size converter for ease of coupling
  • Bondable junction-up or down
  • Very high reliability design, including high quality MOCVD epitaxy
  • Patented low-penetration, ohmic p-contact design
  • Patented junction-side bonding pads, which provide a barrier to solder penetration
  • Patented hermetic facet coatings
  • Qualified per the intent of Telcordia GR-468
  • Operating temperature 0°C to +75°C

Lifecycle Status


Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Active
Distrib. Inventory No
Form Factor Die
Structure DFB
RoHS6 Compliant Y
Data Rate 16 Gb/s
Wavelength/channel plan CWDM
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