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The 241S1xx series is a single-mode, edge-emitting laser diode chip with CWDM4 wavelengths, for use in applications at 25 Gb/s or 28 Gb/s. The design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance coating on the front facet and a very high reflectance coating on the rear facet. Gold bonding pads are provided on both the p and n sides. A hexadecimal number appears on both sides of the chip for identification purposes. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests. Each shipped bare die is fully tested at 25°C. These dies are identical to those used in Broadcom’s components level products.


  • Very low threshold current (< 5 mA at 25°C)
  • Capable of transmission up to 28 Gb/s per channel
  • High output power
  • Integrated spot size converter (SSC), near circular and narrow beam pattern for ease of coupling
  • Bondable junction-up or junction-down
  • Very high reliability design, including high quality MOCVD epitaxy
  • Patented low-penetration, ohmic p-contact design
  • Patented junction-side bonding pads providing a barrier to solder penetration
  • Patented hermetic facet coatings
  • Qualifed per the intent of Telcordia GR-468
  • Operating temperature 0°C to +75°C
  • CWDM4 (1270 nm to 1330 nm) wavelengths

Lifecycle Status


Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Active
Distrib. Inventory No
Form Factor Die
Structure DFB
RoHS6 Compliant Y
Data Rate 25 Gb/s
Wavelength/channel plan CWDM
Product Brief1 i