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The 247Ex-1310 is a single mode, edge-emitting laser diode chip emitting at 1310 nm for use in uncooled applications up to 75-mW output power. The design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet. Gold bonding pads are provided on both the p and n sides. A hexadecimal number appears on both sides of the chip for identification purposes. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and multi-temperature CW test. Each shipped bare die is pulse-tested at 25°C.


  • High output power
  • Low beam divergence angle
  • Bondable junction-up or junction-down
  • Long history of proven field reliability
  • Reliability by design, including high quality MOCVD epitaxy
  • Patented low-penetration, ohmic p-contact design
  • Patented junction-side bonding pads, which provide a barrier to solder penetration
  • Operating temperature –5°C to +75°C

Lifecycle Status


Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Active
Distrib. Inventory No
Form Factor Die
Structure DFB
RoHS6 Compliant Y
Data Rate CW
Wavelength/channel plan 1310
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