293BNxxx

293BNxxx

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The 293BN series is a single-mode, edge-emitting laser diode chip with CWDM wavelengths ranging from 1270 nm to 1330 nm for use in uncooled applications up to 10.3 Gb/s. The design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet. Gold bonding pads are provided on both the p and n sides. A hexadecimal number appears on both sides of the chip for identification purposes. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW, and dynamic tests. Each shipped bare die is fully tested at 25°C. These die are identical to those used in Broadcom component-level products.

Features

  • Low threshold current
  • High output power
  • Near circular beam pattern
  • Bondable junction-up or junction-down
  • Long history of proven field reliability
  • Very high reliability design, including high quality MOCVD epitaxy
  • Patented low-penetration, ohmic p-contact design
  • Patented junction-side bonding pads that provide a barrier to solder penetration
  • Patented hermetic facet coatings
  • Qualified per intent of Telcordia GR-468
  • Operating temperature: –25 to +85°C
  • CWDM wavelengths (1.27 μm to 1.33 μm)

 

Lifecycle Status

Active

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Active
Distrib. Inventory No
Form Factor Die
Structure DFB
RoHS6 Compliant Y
Data Rate 10 Gb/s
Wavelength/channel plan CWDM

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