Currently Viewing:

The 118D25 is a mesa technology InGaAs/ InP 1×4 PIN photodetector array that supports lightwave applications in the 25Gb/s range over the temperature range –40°C to 85°C. The p-side layout includes metalized pads that accept automated solder-ball attachment as an enabler for flip-chip bonding. The substrate side incorporates an InP lens etched into the semi-insulating substrate surface, with broad-band AR coating. This design results in forgiving chip placement tolerances and enables passive alignment to the optical source in some optical configurations.


  • Typical dark currents < 5nA at 25°C
  • 1260-nm to 1620-nm wavelength band
  • Substrate illuminated with integral lens
  • Flip-chip on carrier or submount can achieve passive alignment with suitable optical design
  • Qualified per the intent of Telcordia GR-468

Lifecycle Status

Limited Release

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Limited Release
Distrib. Inventory No
Form Factor Die
Number of Channels 4
Wavelength 1260 to 1620 nm
Temperature -40°C + 85°C
Dimensions (LxWxH in µm) 2000x500x185
Top Contact Configuration GSG
Aperture NA (lensed)
Structure PIN
RoHS6 Compliant Y
Data Rate 25 Gb/s
Product Brief1 i