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The 134A is a mesa technology InAlAs/ InGaAs/ InP Avalanche Photodiode (APD) that supports lightwave applications in the 10-Gb/s range over the –40°C to 85°C industrial temperature range. The InAlAs gain region results in a low temperature coefficient of breakdown of ~0.03 V°/C. The substrate side incorporates an InP lens etched into the semi-insulating substrate surface, with broad-band AR coating. This design results in forgiving chip placement tolerances and enables passive alignment to the optical source in some optical configurations.


  • Designed for 10-Gb/s lightwave receivers
  • Low temperature coefficient of breakdown supports industrial temperature operation
  • M = 1 responsivity ~0.9 A/W at 1550 nm
  • Typical dark current < 20 nA at 25°C
  • 1260-nm to 1620-nm wavelength band 
  • Substrate-illuminated with integral lens
  • Flip-chip on submount compatible with TO Can receiver assemblies
  • Qualified per the intent of Telcordia GR-468

Lifecycle Status

Limited Release

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Limited Release
Distrib. Inventory No
Form Factor Die
Number of Channels 1
Wavelength 1260 to 1620 nm
Temperature -40°C + 85°C
Dimensions (LxWxH in µm) 500x500x170
Top Contact Configuration GSG
Aperture NA (lensed)
Structure APD
RoHS6 Compliant Y
Data Rate 10 Gb/s
Product Brief1 i