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The 134Ax 10-Gb/s APD chip-on-carrier is available as 134ARxx (flip- chip on 250-μm thick submount), and 134AUxx (flip-chip on 450-μm thick submount) where xx indicates the Vbr bin for voltage breakdown.  The APD chip is a mesa technology InAlAs/ InGaAs/ InP Avalanche Photodiode (APD) that supports lightwave applications in the 10-Gb/s range over the –40°C to 85°C industrial temperature range. The InAlAs gain region results in a low temperature coefficient of breakdown of ~0.03 V°/C . The substrate side incorporates an InP lens etched into the semi-insulating substrate surface, with broad-band AR coating.


  • Designed for 10-Gb/s lightwave receivers
  • Low temperature coefficient of breakdown supports industrial temperature operation
  • M = 1 responsivity ~0.9 A/W at 1550 nm
  • Typical dark current < 20 nA at 25°C
  • 1260-nm to 1620-nm wavelength band
  • Substrate illuminated with integral lens
  • Flip-chip on submount compatible with TO Can receiver assemblies
  • Qualified per Telcordia GR-468

Lifecycle Status

Limited Release

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Limited Release
Distrib. Inventory No
Form Factor CoC
Number of Channels 1
Wavelength 1260 to 1620 nm
Temperature -40°C + 85°C
Dimensions (LxWxH in µm) 950x600x250
Top Contact Configuration GSG
Aperture NA (lensed)
Structure APD
RoHS6 Compliant Y
Data Rate 10 Gb/s
Product Brief1 i