GaAs 1×3 Array PIN Photodiode

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The SPD2012-4 is a mesa structured, GaAs-based PIN photodiode array offering four channels of 60mm top-side illuminated detection windows with a bandwidth capable of up to 12GHz per channel. This product has high responsivity, low dark current, low capacitance and excellent reliability. The photodiode’s low parasitics make it ideal for high-speed, multimode, 4x10Gb/s applications in combination with today’s high-performance 4x10Gb/s quad channel transimpedance amplifiers (TIAs).

Lifecycle Status

Limited Release

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Limited Release
Distrib. Inventory No
Form Factor Die
Number of Channels 4
Wavelength 840-860 nm
Temperature -5°C - 95°C
Dimensions (LxWxH in µm) 1120x320x150
Top Contact Configuration SG
Aperture 60 µm
RoHS6 Compliant Y
Data Rate 10 Gb/s
Array 1x4
Pad Style 2 pad N-P adjacent
Material GaAs