TO295J149x

1.3 µm FP Chip in TO Can for Wide-Temperature 10Gb/s Uncooled applications to 1km

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The Broadcom TO295J149x is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1490nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports 1490nm transmission for use in passive optical networks (PON). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

Features

  • 1490nm wavelength
  • Low threshold current
  • High output power
  • TO-56 package with flat window or lensed with a range of focal point options
  • Near Circular beam pattern
  • Long history of proven field reliability
  • Very high reliability design
  • Operating temperature range 0C to 70C; can be extended to -40C to +85C

Applications

  • Supports performance up to 2.7 Gb/sec bit rate, -40C to 85C operating temperature range
  • FTTx/ PON Networks

Lifecycle Status

Active

Substance Compliance

  • RoHS6
    With Exemptions
Specification Value
Lifecycle Active
Distrib. Inventory No
Data Rate 2.5 Gb/s
Form Factor TO can
Connector Type NA
Fiber Type Single Mode
Maximum Distance (km) N/A
Nominal Optical Wavelength (nm) 1490
Emitter DFB
RoHS6 Compliant Y with exemptions

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