MGA-71543

3V LNA with Bypass Switch, 0 to 9dBm Adjustable IIP3, SOT343(SC-70)

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Overview

Overview
Specifications
Documentation

Overview

Features

The MGA-71543 is a low noise amplifier with built-in bypass switch. It is housed in the miniature SOT-343 package and designed for 3V cellular/PCS applications, e.g. LNA and driver amplifier in CDMA handsets. Bias 3V, 10mA: Gain = 16dB; NF = 1.1dB; IIP3 = 4.3dB all at 2GHz. In bypass mode: insertion loss = 5.6dB; IIP3 = 35dBm.

Active

Substance Compliance

RoHS6

Fully Compliant

Specifications

Specification	Value
Lifecycle	Active
RoHS6 Compliant	Y
Distrib. Inventory	Yes
Frequency (GHz)	0.1 -6.0
Bias Condition (V@mA)	3V@10 mA
NF (dB)	0.8
Gain (dB)	16
P1dB (dBm)	7.4
OIP3 (dBm)	+3(IIP3)
Package	SOT-343

Documentation

ADS Model 1

Title	Date	Type	Alert
MGA-71543 ADS Model This library of models is supplied to users as an aid to circuit designs. While it reflects reasonably close similarity to the actual devices in terms of performance, it is not suggested as a replacement for lab evaluation. File Size: 13 KB Language: English	03/21/2002	zip	Create

Application Note4

Title	Date	Type	Alert
2.62.7 GHz Noise Amplifier File Size: 550 KB Language: English	09/01/2010	pdf	Create
AN A004R: Electrostatic Discharge mage Control File Size: 396 KB Language: English	07/13/2010	pdf	Create
AN A006: Mounting Considerations for Microwave Semiconductors Mounting Considerations for Packaged Microwave Semiconductors File Size: 87 KB Language: English	07/21/2009	pdf	Create
MGA-71543 - A Low Noise High Linearity MMIC LNA with Integrated Mitigated Bypass Switch for 3.5 GHz IEEE 802.16 (WiMAX) Applications File Size: 212 KB Language: English	07/13/2006	pdf	Create

Data Sheet1

Title	Date	Type	Alert
MGA-71543 Low Noise Amplifier Mitigated Bypass Switch File Size: 557 KB Language: English	09/28/2015	pdf	Create

Design Guide2

Title	Date	Type	Alert
Design Tip: W-CDMA application using MGA-71543, Noise Amplifier with Bypass Switch W-CDMA application using MGA-71543, Noise Amplifier with Bypass Switch File Size: 148 KB Language: English	10/27/2005	pdf	Create
Design Tip: 2.4 GHz application using MGA-71543, a Low Noise Amplifier with Bypass Switch 2.4 GHz application using MGA-71543, a Low Noise Amplifier with Bypass Switch File Size: 82 KB Language: English	10/27/2005	pdf	Create

Obsolescence Notice0

Product Change Notice (PCN)9

Title	Date	Type	Alert
V11-024-480035-0B - Assembly and Test related change To qualify alternate assembly and test sources File Size: 51 KB Language: English	05/14/2012	pdf	Create
V11-024-480035-0A - Assembly and Test related change To qualify alternate assembly and test sources File Size: 195 KB Language: English	11/03/2011	pdf	Create
Qualifying New Contract Manufacturers Qualifying New Contract Manufacturers File Size: 348 KB Language: English	03/01/2009	pdf	Create
CCN021402AT1 - Transfer of semiconductor wafer fabrication Transfer of semiconductor wafer fabrication from locations in Santa Clara and Newark, California to World Class facility in Fort Collins, Colorado File Size: 17 KB Language: English	10/27/2005	pdf	Create
PCN: A05-011-480036-0A, Mar. 2005 Wafer related: Addition of Titanium-Platinum (Ti-Pt) bilayer between metal layers. File Size: 14 KB Language: English	03/23/2005	pdf	Create
PCN: A05-010-480035-0A, Mar. 2005 Qualification of an additional contract manufacturer for Wireless Semiconductor DivisionÃÂ¿s SOT-363, SOT-343 and SOT-323 packaged products. File Size: 21 KB Language: English	03/17/2005	pdf	Create
PCN: A04-014-480036-0B In the past, all GaAs wafer epi was grown at Avago Technologies for part numbers above. Avago Technologies is currently qualifying an external supplier of epi. Upon successful completion, Avago Technologies will fabricate and supply GaAs products utilizing materials from the external epi source. File Size: 15 KB Language: English	12/16/2004	pdf	Create
PCN: A04-001-480035-0A, Mar. 2004 File Size: 153 KB Language: English	03/22/2004	pdf	Create
CCN040601LL1 - Qualifying external suplier of epi for GaAs ATF-xxxxx, IAM-91563, and MGA-xxxxx Preliminary characterization shows no difference in electrical, mechanical or quality/reliability characteristics. More complete DC and RF parameter electrical characterizations are being performed on appropriate selected products to ensure parametric performance consistency. The external epi parts are expected to have similar parametric distributions as the existing internal epi products. The external epi supplier is an established, experienced quality supplier in the industry. Similar epi materials have already been qualified by another Avago Technologies GaAs wafer fab on mmwave devices. File Size: 15 KB Language: English	04/05/2001	pdf	Create

Reliability Data Sheet1

Title	Date	Type	Alert
MGA-71543 72543 Noise Amplifier Bypass Switch Reliability Sheet Low noise amplifiers with bypass switch fabricated with Avago Technologies' new PHEMT B process. File Size: 55 KB Language: English	05/30/2006	pdf	Create

S-Parameter6

Amplifiers, Filters, and RF Components

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