High frequency detector diode

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The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV

Lifecycle Status

Not Recommended for New Design

Replacement Part

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Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Not Recommended for New Design
Distrib. Inventory Yes
Configuration Common Anode
Ct Pf 0.3
RoHS6 Compliant Y
Package SOT-323
Vbr V 4.0
Vf Mv 250.0
Series Res In Ohms 14.0

Application Brief1 i
Application Note15 i
Equivalent Circuit1 i
Obsolescence Notice1 i
Product Change Notice (PCN)17 i
Spice Model1 i