Broadcom has an extensive portfolio of silicon bipolar and GaAs FET transistors.
The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity.
Broadcom’s bipolar RF transistors offer high performance that is optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets.
These parts are at end of life and should not be used in new designs. High performance silicon transistors optimized for low current and low voltage.
These parts are at end of life and should not be used in new designs. Using PHEMT technology, these GaAs FET products are designed for use in wireless systems where low noise is a key requirement.