Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak

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This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for tower-mounted amplifiers, front-end LNA or hybrid modules for base stations, MMDS and other RF applications in the 450MHz to 6GHz frequency range.

Its superior high frequency performance at 3V also makes it ideal as a power amplifier for 5-6 GHz 802.11a and HIPERLAN/2 Wireless LAN PCMCIA PC cards.


  • Typical performance at 2 GHz 3V/60mA is NF=0.5dB, OIP3=35.8dBm, P1dB=21.4dBm and Ga=17.4dB
  • Typical performance at 5.8 GHz 3V/60mA is Fmin=1.2dB, OIP3=37.6dBm, P1dB=19.4dBm and Ga=11.9dB

Lifecycle Status


Replacement Part

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Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Obsolete
Distrib. Inventory No
RoHS6 Compliant Y
Frequency (GHz) 0.45-10
Bias Condition (V@mA) 3V@60mA
NF (dB) 0.5
Gain (dB) 17.5
P1dB (dBm) 21.4
OIP3 (dBm) 35.8
Package SMT 1.4x1.2
ADS Model 1 i
Application Brief2 i
Application Note5 i
Data Sheet1 i
Obsolescence Notice1 i
Product Change Notice (PCN)9 i
Reliability Data Sheet1 i
S-Parameter4 i
White Papers1 i


Demonstration circuit board for New Source Inductance