Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for tower-mounted amplifiers, front-end LNA or hybrid modules for base stations, MMDS and other RF applications in the 450MHz to 6GHz frequency range.
Its superior high frequency performance at 3V also makes it ideal as a power amplifier for 5-6 GHz 802.11a and HIPERLAN/2 Wireless LAN PCMCIA PC cards.
- Typical performance at 2 GHz 3V/60mA is NF=0.5dB, OIP3=35.8dBm, P1dB=21.4dBm and Ga=17.4dB
- Typical performance at 5.8 GHz 3V/60mA is Fmin=1.2dB, OIP3=37.6dBm, P1dB=19.4dBm and Ga=11.9dB
Not Recommended for New Design
|Lifecycle||Not Recommended for New Design|
|Bias Condition (V@mA)||3V@60mA|