Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak

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This Low Current Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for receiver LNA or hybrid modules for handsets, Wireless LAN, fixed wireless and other RF applications in the 450MHz to 10GHz frequency range.

Its superior high frequency performance at 3V makes it ideal as a LNA for 5-6 GHz 802.11a and HIPERLAN/2 Wireless LAN PCMCIA PC cards.


  • Typical low current performance at 2 GHz 2.7V/10mA is NF=0.5dB, OIP3=24dBm, P1dB=14.6dBm and Ga=17.5dB
  • Typical higher current performance at 2 GHz 3V/20mA is NF=0.5dB, OIP3=30dBm, P1dB=16dBm and Ga=18dB
  • Typical performance at 5.8 GHz 2.7V/10mA is Fmin=0.9dB, OIP3=24.5dBm, P1dB=14dBm and Ga=12dB

Lifecycle Status


Replacement Part

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Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Obsolete
Distrib. Inventory No
RoHS6 Compliant Y
Frequency (GHz) 0.45-6
Bias Condition (V@mA) 2.7V@10mA
NF (dB) 0.5
Gain (dB) 17.5
P1dB (dBm) 14.6
OIP3 (dBm) 24.1
Package SMT 1.4x1.2
ADS Model 1 i
Application Brief2 i
Application Note7 i
Data Sheet1 i
Obsolescence Notice1 i
Product Change Notice (PCN)9 i
S-Parameter10 i
White Papers1 i


Demonstration circuit board for New Source Inductance